Single-crystal Al0.8In0.2N(0001) thin films were grown epitaxially onto lattice-matched Ti0.2Zr0.8N(111) seed layers on MgO(111) substrates at 300°C by magnetron sputter epitaxy. Low-energy ion-assisted epitaxial growth conditions were achieved by applying a substrate potential of 15V. Cross-sectional high-resolution electron microscopy verified the epitaxy and high-resolution x-ray diffraction ω-rocking scans of the Al0.8In0.2N 0002 peak (full width at half maximum 2400arcsec) indicated a high structural quality of the films. Cathodoluminescence measurements performed in a scanning electron microscope at 5K revealed Al0.8In0.2N luminescence at 248nm, or equivalently 5.0eV, showing that Al0.8In0.2N is a promising material for deep-ultraviolet optoelectronic devices.

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