The authors demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in a forward biased light emitting Schottky diode (LESD) fabricated on a GaAs based heterostructure with a quantum well (QW). The spin polarization of the injected holes was detected by measuring the circular polarization of the electroluminescence (EL) from the near surface InGaAsGaAs QW. An intermediate gold layer has been used in order to improve the spin injection efficiency. Over 40% degree of circular polarization of the EL has been observed at T=2K for the LESD structure with Au–Ni–Au Schottky contact.

1.
I.
Zutic
,
J.
Fabian
, and
S.
Das Sarma
,
Rev. Mod. Phys.
76
,
323
(
2004
).
2.
K. H.
Ploog
,
J. Appl. Phys.
91
,
7256
(
2002
).
3.
H. J.
Zhu
,
M.
Ramsteiner
,
H.
Kostial
,
M.
Wasseimeier
,
H.-P.
Schohonher
, and
K. H.
Ploog
,
Phys. Rev. Lett.
87
,
016601
(
2001
).
4.
A. T.
Hanbicki
,
B. T.
Jonker
,
G.
Itskos
,
G.
Kioseoglou
, and
A.
Petrou
,
Appl. Phys. Lett.
80
,
1240
(
2002
).
5.
V. F.
Motsnyi
,
J.
De Boeck
,
J.
Das
,
W.
Van Roy
,
G.
Borghs
,
E.
Goovaerts
, and
V. I.
Safarov
,
Appl. Phys. Lett.
81
,
265
(
2002
).
6.
T.
Manago
and
H.
Akinaga
,
Appl. Phys. Lett.
81
,
694
(
2002
).
7.
C. H.
Li
,
G.
Kioseoglou
,
O. M. J.
van’t Erve
,
M. E.
Ware
,
D.
Gammon
,
R. M.
Stroud
,
B. T.
Jonker
,
R.
Mallory
,
M.
Yasar
, and
A.
Petrou
,
Appl. Phys. Lett.
86
,
132503
(
2005
).
8.
E. I.
Rashba
,
Phys. Rev. B
62
,
R16267
(
2000
).
9.
V. F.
Motsnyi
,
P.
Van Dorpe
,
W.
Van Roy
,
E.
Goovaerts
,
V. I.
Safarov
,
G.
Borghs
, and
J.
De Boeck
,
Phys. Rev. B
68
,
245319
(
2003
).
10.
O. M. J.
van’Erve
,
G.
Kioseoglou
,
A. T.
Hanbicki
,
C. H.
Li
,
B. T.
Jonker
,
R.
Mallory
,
M.
Yasar
, and
A.
Petrou
,
Appl. Phys. Lett.
84
,
4334
(
2004
).
12.
N. V.
Baidus
,
P. B.
Demina
,
M. V.
Dorokhin
,
B. N.
Zvonkov
,
E. I.
Malysheva
, and
E. A.
Uskova
,
Semiconductors
39
,
17
(
2005
).
13.
N. V.
Baidus
,
B. N.
Zvonkov
,
P. B.
Mokeeva
,
E. A.
Uskova
,
S. V.
Tikhov
,
M. I.
Vasilevskiy
,
M. J. M.
Gomes
, and
S. A.
Filonovich
,
Semicond. Sci. Technol.
19
,
S469
(
2004
).
14.
E. A.
Uskova
,
M. V.
Dorokhin
,
B. N.
Zvonkov
,
P. B.
Demina
,
E. I.
Malysheva
,
E. A.
Pitirimova
, and
F. Z.
Gilmutdinov
,
Poverkhnost
2
,
89
(
2006
) (in Russian).
15.
I. A.
Karpovich
,
B. N.
Zvonkov
,
N. V.
Baidus
,
S. V.
Tikhov
, and
D. O.
Filatov
, in
Trends in Nanotechnology Research
, edited by
Eugene V.
Dirote
(
Nove Science
,
Hauppauge, NY
,
2004
), Chap. 8, pp.
173
208
.
16.
N. A.
Gippius
,
A. L.
Yablonskii
,
A. B.
Dzyubenko
,
S. G.
Tikhodeev
,
L. V.
Kulik
,
V. D.
Kulakovskii
, and
A.
Forchel
,
J. Appl. Phys.
83
,
5410
(
1998
).
17.
T.
Ando
,
A. B.
Fowler
, and
F.
Stern
,
Rev. Mod. Phys.
54
,
437
(
1982
).
18.
F.
Meier
and
B. P.
Zakharchenya
,
Optical Orientation
(
North-Holland, Amsterdam
,
1984
).
19.
G. M.
Minkov
,
A. A.
Sherstobitov
,
A. V.
Germanenko
,
O. E.
Rut
,
V. A.
Larionova
, and
B. N.
Zvonkov
,
Phys. Rev. B
72
,
165325
(
2005
).
20.
S.
Lee
,
S. R.
Eric Yang
,
M.
Dobrowolska
, and
J. K.
Furdyna
,
Semicond. Sci. Technol.
19
,
1125
(
2004
).
21.
J.-H.
Ku
,
J.
Chang
, and
H. K. J.
Eom
,
Appl. Phys. Lett.
88
,
172510
(
2006
).
22.
I. V.
Kukushkin
and
V. B.
Timofeev
,
Adv. Phys.
45
,
147
(
1996
).
23.
E. I.
Rashba
and
V. B.
Timofeev
,
Sov. Phys. Semicond.
20
,
977
(
1986
).
24.
T.
Ando
,
J. Phys. Soc. Jpn.
43
,
1616
(
1977
).
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