Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of by spin coating in this work. The bottom- and top-gate field-effect TFTs with channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and , respectively. The operating gate voltages for the top-gate transistor with an dielectric layer are actually lower, compared with the bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.
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