The authors report the structural, optical, and transport properties of high quality InN epitaxial films grown on GaN substrates by plasma-assisted molecular beam epitaxy. They have found a strong correlation between the structural quality and the measured carrier mobilities. Comparison of temperature-dependent Hall data with a theoretical transport model indicates that the electron mobility in state-of-art InN is limited by charged dislocation scattering. The model predicts that an order-of-magnitude increase in electron mobilities can be achieved by the reduction of dislocation densities in InN.

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