Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors Available to Purchase

The authors present a systematic study of the effect of InAs deposition time on single photon detectors based on quantum dot resonant tunneling diodes. A dramatic improvement in the dark counts due to the electron generation-recombination events in the dots is found by reducing the size of the dots. The dark count rate can be improved to less than $6.6×10−10ns−1$ while maintaining a single photon detection efficiency of 2%.