Spatially controlled jet-printed etch masks, having a minimum drop size of 4050μm, were used to define gap patterns having a minimum feature size of 10μm. The defined gaps, in combination with nickel electroplating, were used to create bottom-gate electrode thin-film transistors (TFTs) with gate lengths of 1020μm and gate widths of 150μm. Self-aligned source/drain top contacts were used for fabricating polythiophene-based TFT devices having channel width-to-length ratios of 4. A typical p-channel TFT device had an on/off ratio of 107, threshold voltage of 1V, and field-effect mobility of 0.034cm2Vs.

1.
W. S.
Wong
,
S.
Ready
,
R.
Matusiak
,
S. D.
White
,
J.-P.
Lu
,
J.
Ho
, and
R. A.
Street
,
Appl. Phys. Lett.
80
,
610
(
2002
).
2.
W. S.
Wong
,
S. E.
Ready
,
J.-P.
Lu
, and
R. A.
Street
,
IEEE Electron Device Lett.
24
,
577
(
2003
).
3.
L. T.
Creagh
and
M.
McDonald
,
MRS Bull.
28
,
807
(
2003
).
4.
K. E.
Paul
,
W. S.
Wong
,
S. E.
Ready
, and
R. A.
Street
,
Appl. Phys. Lett.
83
,
2070
(
2003
).
5.
A. C.
Arias
,
S. E.
Ready
,
R.
Lujan
,
W. S.
Wong
,
K. E.
Paul
,
A.
Salleo
,
M. L.
Chabinyc
,
R.
Apte
,
R. A.
Street
,
Y.
Wu
,
P.
Liu
, and
B.
Ong
,
Appl. Phys. Lett.
85
,
3304
(
2004
).
6.
T.
Shimoda
,
T. K.
Morii
,
S.
Seki
, and
H.
Kiguchi
,
MRS Bull.
28
,
821
(
2003
).
7.
H.
Sirringhaus
,
T.
Kawase
,
R. H.
Friend
,
T.
Shimoda
,
M.
Inbasekaran
,
W.
Wu
, and
E. P.
Woo
,
Science
290
,
2123
(
2000
).
8.
C. W.
Sele
,
T.
vonWerne
,
R. H.
Friend
, and
H.
Sirringhaus
,
Adv. Mater. (Weinheim, Ger.)
8
,
997
(
2005
).
9.
F.
Gao
and
A. A.
Sonin
,
Proc. R. Soc. London, Ser. A
444
,
533
(
1994
).
10.
S.
Schiaffino
and
A. A.
Sonin
,
J. Fluid Mech.
343
,
95
(
1997
).
11.
E.
Delamarche
,
M.
Geissler
,
J.
Vichiconti
,
W. S.
Graham
,
P. A.
Andry
,
J. C.
Flake
,
P. M.
Fryer
,
R. W.
Nunes
,
B.
Michel
,
E. J.
O’Sullivan
,
H.
Schmid
,
H.
Wolf
, and
R. L.
Wisnieff
,
Langmuir
19
,
5923
(
2003
).
12.
R. A.
Street
,
W. S.
Wong
,
S. E.
Ready
,
M. L.
Chabinyc
,
A. C.
Arias
,
S.
Limb
,
A.
Salleo
, and
R.
Lujan
,
Mater. Today
9
,
32
(
2006
).
13.
D. B.
Thomasson
and
T. N.
Jackson
,
IEEE Electron Device Lett.
19
,
124
(
1998
).
14.
A.
Salleo
,
M.
Chabinyc
,
M. S.
Yang
, and
R. A.
Street
,
Appl. Phys. Lett.
81
,
4383
(
2002
).
15.
M. L.
Chabinyc
,
J.-P.
Lu
,
R. A.
Street
,
Y.
Wu
,
P.
Liu
, and
B. S.
Ong
,
J. Appl. Phys.
96
,
2063
(
2004
).
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