Spatially controlled jet-printed etch masks, having a minimum drop size of , were used to define gap patterns having a minimum feature size of . The defined gaps, in combination with nickel electroplating, were used to create bottom-gate electrode thin-film transistors (TFTs) with gate lengths of and gate widths of . Self-aligned source/drain top contacts were used for fabricating polythiophene-based TFT devices having channel width-to-length ratios of . A typical -channel TFT device had an on/off ratio of , threshold voltage of , and field-effect mobility of .
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