Atomic exchanges across the interface between a HfO2 thin film and strained semiconducting Si1xGex (x=0.1, 0.2, and 0.3) was investigated by extended x-ray absorption fine structures. Atomic layer deposition of HfO2 films on epitaxial Si1xGex produces a Hf-silicate (Hf–O–Si bond) phase at the interface. Also O atoms diffuse into the Si1xGex alloy to form Ge oxide in a segregated phase. This tendency becomes evident when the Ge concentration of the substrate becomes higher or when HfO2 is deposited and these samples are compared to the pure Si1xGex substrates which have been exposed to ambient atmosphere.

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