The authors report the growth and characterization of a dilute nitride, InNAsSbInAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. The authors obtained mid-infrared luminescence around 4μm at low temperature, which reveals strong carrier localization behavior at low temperature, induced by nitrogen and antimony interaction. The band alignment of InNAsSbInAs can be type I instead of the conventional type II found for InAsSbInAs. A conduction band offset, Ec, of 102meV was obtained.

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