A quantum well (160Å) transistor laser with a 400μm cavity length that achieves the large 3dB modulation bandwidth of 13.5GHz is described. The fast base recombination (transport determined, τBL<10ps) permits improvement of the carrier-photon damping ratio (>12), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of 0GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ=1000nm), and increase with operation on the first excited state (λ=980nm).

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