A quantum well transistor laser with a cavity length that achieves the large modulation bandwidth of is described. The fast base recombination (transport determined, ) permits improvement of the carrier-photon damping ratio , resulting in a resonant peak magnitude of unity and consequently a resonance frequency of (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state , and increase with operation on the first excited state .
Carrier lifetime and modulation bandwidth of a quantum well transistor laser
M. Feng, N. Holonyak, A. James, K. Cimino, G. Walter, R. Chan; Carrier lifetime and modulation bandwidth of a quantum well transistor laser. Appl. Phys. Lett. 11 September 2006; 89 (11): 113504. https://doi.org/10.1063/1.2346369
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