The authors show that the electron mobility can be strongly enhanced in AlNGaNAlN heterostructures with the shallow InxGa1xN channel—nanogroove—in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron—interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10111013cm2), which is important for GaN technology.

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