The authors have studied the interactions between implant defects and phosphorus diffusion in crystalline silicon. Defect engineering enables ultrashallow junction formation using phosphorus, carbon, and germanium coimplants, and spike anneal. Their experimental data suggest that the positioning of a preamorphized layer using germanium implants plays an important role in phosphorus diffusion. They find that extending the overlap of germanium preamorphization and carbon profiles results in greater reduction of phosphorus transient-enhanced diffusion by trapping more excess interstitials. This conclusion is consistent with the end-of-range defects calculated by Monte Carlo simulation and annealed carbon profiles.
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TSUPREM-4 User’s guide, version W-2005.10, Synopsys,
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. Standard Monte Carlo ion implant model is used to calculate the interstitial profiles. No parameter adjustment is performed.© 2006 American Institute of Physics.
2006
American Institute of Physics
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