The absolute epitaxial relationships between III-nitride films and -plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be and , respectively. The O–Al bonds in the sapphire surface are antiparallel to the N-III bonds in the III-N films. High-resolution transmission electron microscopy shows that the AlN nucleation layer is asymmetrically strained. Along its direction, the AlN layer is in extension whereas it is relaxed perpendicular to .
© 2006 American Institute of Physics.
2006
American Institute of Physics
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