The absolute epitaxial relationships between III-nitride films and -plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be and , respectively. The O–Al bonds in the sapphire surface are antiparallel to the N-III bonds in the III-N films. High-resolution transmission electron microscopy shows that the AlN nucleation layer is asymmetrically strained. Along its direction, the AlN layer is in extension whereas it is relaxed perpendicular to .
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Research Article| September 14 2006
Epitaxial orientation of III-nitrides grown on -plane sapphire by metal-organic-vapor-phase epitaxy
P. Vennéguès, Z. Bougrioua; Epitaxial orientation of III-nitrides grown on -plane sapphire by metal-organic-vapor-phase epitaxy. Appl. Phys. Lett. 11 September 2006; 89 (11): 111915. https://doi.org/10.1063/1.2353810
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