This letter summarizes research on the characterization of residual stresses and electron-hole lifetimes of polycrystalline silicon sheet for photovoltaic applications. Full-field polariscopy, scanning room temperature photoluminescence, and surface photovoltage are used to characterize the polycrystalline silicon sheet. An orientation dependent stress-optic coefficient has been developed and used to extract the in-plane residual stresses from analysis of transmitted near-infrared light. The characteristics of the spatial distribution and the quantitative correlation between the residual stresses and the electron-hole lifetime are presented.
Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime
S. He, S. Danyluk, I. Tarasov, S. Ostapenko; Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime. Appl. Phys. Lett. 11 September 2006; 89 (11): 111909. https://doi.org/10.1063/1.2354308
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