This letter summarizes research on the characterization of residual stresses and electron-hole lifetimes of polycrystalline silicon sheet for photovoltaic applications. Full-field polariscopy, scanning room temperature photoluminescence, and surface photovoltage are used to characterize the polycrystalline silicon sheet. An orientation dependent stress-optic coefficient has been developed and used to extract the in-plane residual stresses from analysis of transmitted near-infrared light. The characteristics of the spatial distribution and the quantitative correlation between the residual stresses and the electron-hole lifetime are presented.
REFERENCES
1.
2.
R. L.
Wallace
, J. I.
Hanoka
, A.
Rohatgi
, and G.
Crotty
, Sol. Energy Mater.
48
, 179
(1997
).3.
4.
5.
J. P.
Kalejs
, B. H.
Mackintosh
, and T.
Surek
, J. Cryst. Growth
50
, 175
(1980
).6.
J. C.
Lambropoulos
, J. W.
Hutchinson
, R. O.
Bell
, B.
Chalmers
, and J. P.
Kalejs
, J. Cryst. Growth
65
, 324
(1983
).7.
8.
W. J.
Bond
and J.
Andrus
, Phys. Rev.
101
, 1211
(1956
).9.
10.
A. K.
Dutta
and P. K.
Ajmera
, J. Appl. Phys.
69
, 7411
(1991
).11.
M.
Fukuzawa
and M.
Yamada
, J. Cryst. Growth
229
, 22
(2001
).12.
13.
T.
Zheng
and S.
Danyluk
, Mater. Eval.
59
, 1227
(2001
).14.
15.
16.
S.
Ostapenko
, I.
Tarasov
, J. P.
Kalejs
, and C. H. E.-U.
Reisner
, Semicond. Sci. Technol.
15
, 840
(2000
).17.
N. E.
Dowling
, Mechanical Behavior of Materials
, 2nd edition (Prentice-Hall
, Englewood Cliffs, NJ
, 1998
), p. 286
.© 2006 American Institute of Physics.
2006
American Institute of Physics
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