The energy band gap (Eg) of colloidal InGaPZnS core/shell nanocrystals is investigated by using the optical absorption and the photoluminescence techniques. While the photoluminescence spectra exhibit a strong emission, the optical absorption spectra show a very weak excitonic absorption. From Eg values estimated from the optical absorption spectra, the In composition is calculated to be on the order of 45%–48%. The estimated In mole fraction suggests that InGaP is still a direct band gap semiconductor. The energy band gap is recorded as a function of temperature from which the Debye temperature and the average phonon energy were extracted.

1.
I.
Gur
,
N. A.
Fromer
,
M. L.
Geier
, and
A. P.
Alivisatos
,
Science
310
,
462
(
2005
).
2.
A. M.
Derfus
,
W. C. W.
Chan
, and
S. N.
Bhatia
,
Nano Lett.
4
,
11
(
2004
).
3.
C.
Kirchner
,
T.
Liedl
,
S.
Kudera
,
T.
Pellegrino
,
A. M.
Javier
,
H. E.
Gaub
,
S.
Stŏlzle
,
N.
Fertig
, and
W. J.
Parak
,
Nano Lett.
5
,
331
(
2005
).
4.
M.
Dahan
,
S.
Levi
,
C.
Luccardini
,
P.
Rostaing
,
B.
Riveau
, and
A.
Triller
,
Science
302
,
442
(
2003
).
5.
D. S.
Lidke
,
P.
Nagy
,
R.
Heintzmann
,
D. J.
Arndt-Jovin
,
J. N.
Post
,
H. E.
Grecco
,
E. A.
Jares-Erijman
, and
T. M.
Jovin
,
Nat. Biotechnol.
22
,
198
(
2004
).
6.
E.
Schulze
,
J. T.
Ferrucci
,
K.
Poss
,
L.
Lapointe
,
A.
Bogdanova
, and
R.
Weissleder
,
Invest. Radiol.
30
,
604
(
1995
).
7.
Q. A.
Pankhurst
,
J.
Connolly
,
S. K.
Jones
, and
J.
Dobson
,
J. Phys. D
36
,
R167
(
2003
).
8.
K.
Donaldson
,
R.
Aitken
,
L.
Tran
,
V.
Stone
,
R.
Duffin
,
G.
Forrest
, and
A.
Alexander
,
Toxicol. Sci.
92
,
5
(
2006
).
9.
C.-W.
Lam
,
J. T.
James
,
R.
McCluskey
, and
R. L.
Hunter
,
Toxicol. Sci.
77
,
126
(
2004
).
10.
D. B.
Warheit
,
B. R.
Laurence
,
K. L.
Reed
,
D. H.
Roach
,
G. A. M.
Reynolds
, and
T. R.
Webb
,
Toxicol. Sci.
77
,
117
(
2004
).
12.
Handbook Series on Semiconductor Parameters
, edited by
M.
Levinshtein
and
M.
Shur
(
World Scientific
,
Singapore
,
1995
), Vol.
2
, Chap. 2, p.
37
, and references therein.
13.
P.
Emanuelsson
,
M.
Drechsler
,
D. M.
Hofmann
,
K.
Meyer
,
M.
Moser
, and
F.
Scholz
,
Appl. Phys. Lett.
64
,
2849
(
1994
).
14.
M. O.
Manasreh
,
Semiconductor Heterojunctions and Nanostructures
(
McGraw-Hill
,
New York
,
2005
), Chap. 6, p.
191
.
15.
Y. P.
Varshni
,
Physica (Amsterdam)
34
,
149
(
1967
).
16.
G. W.
‘t Hooft
,
C. J. B.
Riviere
,
M. P. C. M.
Krijn
,
C. T. H. F.
Liedenbaum
, and
A.
Valster
,
Appl. Phys. Lett.
61
,
3169
(
1992
).
17.
K. P.
O’Donnell
and
X.
Chen
,
Appl. Phys. Lett.
58
,
2924
(
1991
).
18.
H.
Lee
,
D.
Biswas
,
M. V.
Klein
,
H.
Morkoç
,
D. E.
Aspnes
,
B. D.
Choe
,
J.
Kim
, and
C. O.
Griffiths
,
J. Appl. Phys.
75
,
5040
(
1994
).
19.
E.
Jahne
and
B.
Ulrici
,
Phys. Status Solidi B
101
,
169
(
1994
).
You do not currently have access to this content.