A series of InGaN quantum wells (QWs) emitting blue-green, blue, violet, or ultraviolet light was grown on InGaN underlying layers (ULs). The potential fluctuation in these InGaN QWs was carefully measured using time-resolved photoluminescence, taking several steps to reduce the quantum confinement Stark effect. The potential fluctuation of InGaN QWs on InGaN ULs was smaller than that on conventional GaN ULs with the identical emission wavelength. A violet-light-emitting diode using an InGaN UL had the electroluminescence intensity approximately five times higher than the one using a conventional GaN UL under the low injection-current conditions, indicating that an InGaN UL effectively eliminates the nonradiative recombination centers in the InGaN QWs.
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4 September 2006
Research Article|
September 06 2006
InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers Available to Purchase
Tetsuya Akasaka;
Tetsuya Akasaka
a)
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Hideki Gotoh;
Hideki Gotoh
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Yasuyuki Kobayashi;
Yasuyuki Kobayashi
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Hidetoshi Nakano;
Hidetoshi Nakano
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Toshiki Makimoto
Toshiki Makimoto
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Tetsuya Akasaka
a)
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Hideki Gotoh
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Yasuyuki Kobayashi
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Hidetoshi Nakano
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Toshiki Makimoto
NTT Basic Research Laboratories
, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japana)
Electronic mail: [email protected]
Appl. Phys. Lett. 89, 101110 (2006)
Article history
Received:
December 14 2005
Accepted:
July 26 2006
Citation
Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hidetoshi Nakano, Toshiki Makimoto; InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers. Appl. Phys. Lett. 4 September 2006; 89 (10): 101110. https://doi.org/10.1063/1.2347115
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