Metal-insulator-semiconductor structures with conjugated polymer ethyl-hexyl substituted polyfluorene (PF2̱6) as the active semiconductor layer, Al2O3 as the insulating oxide layer, and p+-Si as the metal layer have been characterized by means of capacitance-voltage (C-V) and conductance-voltage methods. The negative shift of the flat-band voltage with increasing frequency arises from positive interface charges in the PF2̱6Al2O3 layer. From C-V measurements the unintentional doping density is evaluated as 5.7×1017cm3 at frequencies above 20kHz. The interface trap density is estimated as 7.7×1011eV1cm2 at the flat-band voltage.

1.
A. W.
Grice
,
D. D. C.
Bradley
,
M. T.
Bernius
,
M.
Inbasekaran
,
W. W.
Wu
, and
E. P.
Woo
,
Appl. Phys. Lett.
73
,
629
(
1998
).
2.
M.
Ahles
,
A.
Hepp
,
R.
Schmechel
, and
H.
von Seggern
,
Appl. Phys. Lett.
84
,
428
(
2004
).
3.
U.
Scherf
and
E. J. W.
List
,
Adv. Mater. (Weinheim, Ger.)
14
,
477
(
2002
).
4.
L.-L. Chua,
J.
Zaumseil
,
J.-F.
Chang
,
E. C.-W.
Ou
,
P. K.-H.
Ho
,
H.
Sirringhaus
, and
R. H.
Friend
,
Nature (London)
434
,
194
(
2005
).
5.
D.
Buchanan
,
IBM J. Res. Dev.
43
,
245
(
1999
).
6.
E. P.
Gusev
,
M.
Copel
,
E.
Cartier
,
I. J. R.
Baumvol
,
C.
Krug
, and
M. A.
Gribelyuk
,
Appl. Phys. Lett.
76
,
176
(
2000
).
7.
D.-G.
Park
,
H.-J.
Cho
,
K.-Y.
Lim
,
C.
Lim
,
I.-S.
Yeo
,
J.-S.
Roh
, and
J. W.
Park
,
J. Appl. Phys.
89
,
6275
(
2001
).
8.
G.
Wang
,
D.
Moses
,
A. J.
Heeger
,
H.-M.
Zhang
,
M.
Narasimhan
, and
R. E.
Demaray
,
J. Appl. Phys.
95
,
316
(
2004
).
9.
W.
Riess
,
H.
Riel
,
T.
Beierlein
,
W.
Brütting
,
P.
Müller
, and
P. F.
Seidler
,
IBM J. Res. Dev.
45
,
77
(
2001
).
10.
I.
Torres
and
D. M.
Taylor
,
J. Appl. Phys.
98
,
073710
(
2005
).
11.
S.
Grecu
,
M.
Bronner
,
A.
Optiz
, and
W.
Brütting
,
Synth. Met.
146
,
359
(
2004
).
12.
N.
Zhao
,
O.
Marinov
,
G. A.
Botton
,
M. J.
Deen
,
B. S.
Ong
,
Y.
Wu
, and
P.
Liu
,
IEEE Trans. Electron Devices
52
,
2150
(
2005
).
13.
B.
Tanto
,
S.
Guha
,
C. M.
Martin
,
U.
Scherf
, and
M. J.
Winokur
,
Macromolecules
37
,
9438
(
2004
).
14.
M.
Grell
and
D. D. C.
Bradley
,
Adv. Mater. (Weinheim, Ger.)
11
,
895
(
1999
).
16.
H.
Sirringhaus
,
R. J.
Wilson
,
R. H.
Friend
,
M.
Inbasekaran
,
W.
Wu
,
E. P.
Woo
,
M.
Grell
, and
D. D. C.
Bradley
,
Appl. Phys. Lett.
77
,
406
(
2000
).
17.
Y. Y.
Deng
and
H.
Sirringhaus
,
Phys. Rev. B
72
,
045207
(
2005
).
18.
K.
Choi
,
H.
Harris
,
S.
Gangopadhyay
, and
H.
Temkin
,
J. Vac. Sci. Technol. A
21
,
718
(
2003
).
19.
E. H.
Nicollian
and
J. R.
Brews
,
MOS Physics and Technology
(
Wiley
,
New York
,
1981
).
20.
A.
Cravino
and
N. S.
Sariciftci
,
Nat. Mater.
2
,
360
(
2003
).
21.
J.
Brown
,
H.
Sirringhaus
,
M.
Harrison
,
M.
Shkunov
, and
R. H.
Friend
,
Phys. Rev. B
63
,
125204
(
2001
).
22.
S. M.
Sze
,
Physics of Semiconductor Devices
, 2nd ed. (
Wiley Interscience
,
New York
,
1981
).
23.
E. J.
Meijer
,
A. V. G.
Mangnus
,
C. M.
Hart
,
D. M.
De Leeuw
, and
T. M.
Klapwijk
,
Appl. Phys. Lett.
78
,
3902
(
2001
).
24.
E. H.
Nicollian
and
A.
Goetzberger
,
Bell Syst. Tech. J.
46
,
1055
(
1967
).
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