Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode

Kohda, M.; Kita, T.; Ohno, Y.; Matsukura, F.; Ohno, H.

doi:10.1063/1.2219141

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Research Article| July 06 2006

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a $(Ga, Mn) As ∕ n^{+} - Ga As$ Esaki diode

M. Kohda;

M. Kohda

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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T. Kita;

T. Kita

Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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Y. Ohno;

Y. Ohno ^a)

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and CREST, Japan Science and Technology Agency,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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F. Matsukura;

F. Matsukura

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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H. Ohno

Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency,

Tohoku University

, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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Author & Article Information

^a)

Electronic mail: oono@riec.tohoku.ac.jp

Appl. Phys. Lett. 89, 012103 (2006)

https://doi.org/10.1063/1.2219141

We investigated injection of spin polarized electrons in a $(Ga, Mn) As ∕ n^{+} - Ga As$ Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization $(P_{EL})$ from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum $P_{EL}$ of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

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Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a $(Ga, Mn) As ∕ n^{+} - Ga As$ Esaki diode

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Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a $(Ga, Mn) As ∕ n^{+} - Ga As$ Esaki diode