In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at and at . The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization.
Weak localization in ultrananocrystalline diamond
J. J. Mareš, P. Hubík, J. Krištofik, D. Kindl, M. Fanta, M. Nesládek, O. Williams, D. M. Gruen; Weak localization in ultrananocrystalline diamond. Appl. Phys. Lett. 27 February 2006; 88 (9): 092107. https://doi.org/10.1063/1.2176853
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