The influence of indium composition and quantum well (QW) thickness on the photoluminescence (PL) properties of high nitrogen content (Ga,In)(N,As)GaAs QWs grown by molecular beam epitaxy has been investigated in order to get an efficient emission in the 1.51.7μm range. Strong enhancement of room-temperature PL has been observed for postgrowth annealed QWs. However, the optimum annealing temperature depends on the In composition. Taking into account the effects of thermal annealing, a high In content and a very low growth temperature appear to be the best way to obtain an efficient emission beyond 1.5μm with (Ga,In)(N,As)GaAs QW.

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