Optimum indium composition for $(Ga,In)(N,As)∕GaAs$ quantum wells emitting beyond $1.5μm$

The influence of indium composition and quantum well (QW) thickness on the photoluminescence (PL) properties of high nitrogen content $(Ga,In)(N,As)∕GaAs$ QWs grown by molecular beam epitaxy has been investigated in order to get an efficient emission in the $1.5–1.7μm$ range. Strong enhancement of room-temperature PL has been observed for postgrowth annealed QWs. However, the optimum annealing temperature depends on the In composition. Taking into account the effects of thermal annealing, a high In content and a very low growth temperature appear to be the best way to obtain an efficient emission beyond $1.5μm$ with $(Ga,In)(N,As)∕GaAs$ QW.