The spin splitting of wurtzite GaN was calculated by 32×32 Hamiltonian with spin-orbital interaction. The band-folding effect generates two conduction bands ΔC1 and ΔC3 in which the p-wave probability shows a tremendous change when kz approaches the anticrossing zone. We found that a large spin plitting in GaNAlN quantum wells is produced due to ΔC1-ΔC3 coupling, and is effectively controlled by electric field. Based on the mechanism and gate-controllable spin splitting, we proposed a p-wave-enhanced quantum well, InxGa1-xNInyAl1yN, for the application of the spin-polarized field effect transistor designed by Datta and Das [Appl. Phys. Lett.56, 665 (1990)].

1.
J.
Nitta
,
T.
Akazaki
,
H.
Takayanagi
, and
T.
Enoki
,
Phys. Rev. Lett.
78
,
1335
(
1997
).
2.
S.
Datta
and
B.
Das
,
Appl. Phys. Lett.
56
,
665
(
1990
).
3.
D. J.
Chadi
,
Phys. Rev. B
16
,
790
(
1977
).
4.
G.
Dresselhaus
,
Phys. Rev.
100
,
580
(
1955
);
E. I.
Rashba
and
V. I.
Sheka
,
Sov. Phys. Solid State
3
,
1257
(
1961
).
5.
R. I.
Rashba
,
Sov. Phys. Solid State
2
,
1109
(
1960
);
Y. A.
Bychkov
and
E. I.
Rashba
,
J. Phys. C
17
,
6039
(
1984
).
6.
S. D.
Ganichev
,
V. V.
Bel’kov
,
L. E.
Golub
,
E. L.
Ivchenko
,
P.
Schneider
,
S.
Giglberger
,
J.
Eroms
,
J.
De Boeck
,
G.
Borghs
,
W.
Wegscheider
,
D.
Weiss
, and
W.
Prettl
,
Phys. Rev. Lett.
92
,
256601
(
2004
).
7.
E. O.
Kane
,
J. Phys. Chem. Solids
1
,
249
(
1957
);
E. A.
de Andrada e Silva
,
G. C.
La Rocca
, and
F.
Bassani
,
Phys. Rev. B
50
,
8523
(
1994
).
8.
S. L.
Chuang
and
C. S.
Chang
,
Phys. Rev. B
54
,
2491
(
1996
).
9.
V. I.
Litvinov
,
Phys. Rev. B
68
,
155314
(
2003
).
10.
L. C.
Lew Yan Voon
,
M.
Willatzen
,
M.
Cardona
, and
N. E.
Christensen
,
Phys. Rev. B
53
,
10703
(
1996
), and references therein.
11.
G.
Dresselhaus
,
Phys. Rev.
105
,
135
(
1957
);
G.
Dresselhaus
,
J. Phys. Chem. Solids
1
,
14
(
1956
).
12.
K.
Tsubaki
,
N.
Maeda
,
T.
Saitoh
, and
N.
Kobayashi
,
Appl. Phys. Lett.
80
,
3126
(
2002
).
13.
Ikai
Lo
,
J. K.
Tsai
,
W. J.
Yao
,
P. C.
Ho
,
L. W.
Tu
,
T. C.
Chang
,
S.
Elhamri
,
W. C.
Mitchel
,
K. Y.
Hsieh
,
J. H.
Huang
,
H. L.
Huang
, and
W. C.
Tsai
,
Phys. Rev. B
65
,
161306R
(
2002
);
K. S.
Cho
,
T.-Y.
Huang
,
H.-S.
Wang
,
M.-G.
Lin
,
T.-M.
Chen
,
C.-T.
Liang
,
Y. F.
Chen
, and
Ikai
Lo
,
Appl. Phys. Lett.
86
,
222102
(
2005
).
14.
H.
Harima
,
J. Phys.: Condens. Matter
14
,
R967
(
2002
).
15.
A.
Kobayashi
,
O. F.
Sankey
,
S. M.
Volz
, and
J. D.
Dow
,
Phys. Rev. B
28
,
935
(
1983
).
16.
J. M.
Wagner
and
F.
Bechstedt
,
Phys. Rev. B
66
,
115202
(
2002
).
17.
J. C.
Phillips
, in
Bonds and Bands in Semiconductors
(
Academic
, San Diego, Calif.,
1973
), p.
179
.
18.
B.
Gil
,
O.
Briot
, and
R. L.
Aulombard
,
Phys. Rev. B
52
,
R17028
(
1995
).
19.
R.
Dingle
,
D. D.
Sell
,
S. E.
Stokowski
, and
M.
Ilegems
,
Phys. Rev. B
4
,
1211
(
1971
).
20.
Data in Science and Technology, Semiconductors Group IV Elements and III-V Compounds
, edited by
O.
Madelung
(
Springer
, Berlin,
1991
).
21.
J.
Simon
,
R.
Langer
,
A.
Barski
, and
N. T.
Pelekanos
,
Phys. Rev. B
61
,
7211
(
2000
).
22.
I.
Vurgaftman
and
J. R.
Meyer
,
J. Appl. Phys.
94
,
3675
(
2003
).
23.
L. W.
Tu
,
C. L.
Hsiao
,
T. W.
Chi
,
Ikai
Lo
, and
K. Y.
Hsieh
,
Appl. Phys. Lett.
82
,
1601
(
2003
).
24.
S. J.
An
,
W. I.
Park
,
G.-C.
Yi
,
Y.-J.
Kim
,
H.-B.
Kang
, and
M.
Kim
,
Appl. Phys. Lett.
84
,
3612
(
2004
).
You do not currently have access to this content.