A suitable work function (4.29eV) ideal for n-type transistor is realized by preimplanting multiple n-type dopants in Ni fully silicided gate. Flexible adjustments of work function in Si band gap are realized by coimplanting B with n-type dopants. Leakage current and long-term reliability are not degraded by preimplantation of multiple dopants in Ni fully silicided gate.

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