A SiC p-i-n junction betavoltaic was fabricated, and electrical power output under irradiation from an 8.5GBq P33 source was monitored over a period of four half-lives of the radioisotope. The open-circuit voltage (VOC) of the device was 2.04±0.02V⁠, and the peak power (Pout) was 0.58±0.02μW (2.1±0.2μW∕cm2) at 1.60V⁠. The conversion efficiency (ηconv) was 4.5%±0.3% and the normalized power output indicates no device degradation over more than 3months (four half-lives of the source).

Topics
Band gap, PIN diode, Electrical properties and parameters, Beta particles, Isotopes, Radioactive decay, Chemical elements, Batteries, Betavoltaic device, Carbides
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© 2006 American Institute of Physics.
2006
American Institute of Physics
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