Signal mixing in a multiple input transistor laser near threshold

A single-emitter multiple-input transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the transistor $I-V$ characteristics (⁠$β≡ΔIC∕ΔIB$⁠, $βspon>βstim$⁠), input signals $f1=2GHz$ and $f2=2.1GHz$ are converted into $mf1±nf2$ ranging from $0.1to8.4GHz$⁠. Stimulated emission (enhanced recombination) changes the transistor into a special form of nonlinear element, a special form of electronic processor or “switch.”