Amorphous-carbon nanotube (a-CNT) based devices have been fabricated and transport measurements on these devices have been carried out. It was found that the Schottky barrier formed between the metal contact and a-CNT plays a significant role in the transport of a-CNT devices, and electrical characteristics of these devices may be engineered by varying the characteristics of the contact. In particular for asymmetrically contacted a-CNT devices it was demonstrated that the introduction of hydrogen may increase the current by more than 14 times at a positive bias of 3 V.

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