We report here on the structural and optical properties of selectively grown quantum dots. Our approach combines electron-beam lithography, reactive ion etching, and selective low-pressure metalorganic vapor phase epitaxy, which allows the growth of nanometer-scale InAs quantum dots directly on InP substrate and an improved control of their size uniformity and density. These nanogrown InAs dots exhibit a high-efficiency photoluminescence band pointed at at room temperature.
Nanoepitaxy of quantum dots by metalorganic vapor phase epitaxy for emitters
J. M. Benoit, L. Le Gratiet, G. Beaudoin, A. Michon, G. Saint-Girons, R. Kuszelewicz, I. Sagnes; Nanoepitaxy of quantum dots by metalorganic vapor phase epitaxy for emitters. Appl. Phys. Lett. 23 January 2006; 88 (4): 041113. https://doi.org/10.1063/1.2167804
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