Nanoepitaxy of $InAs∕InP$ quantum dots by metalorganic vapor phase epitaxy for $1.55μm$ emitters

We report here on the structural and optical properties of selectively grown $InAs∕InP$ quantum dots. Our approach combines electron-beam lithography, reactive ion etching, and selective low-pressure metalorganic vapor phase epitaxy, which allows the growth of nanometer-scale InAs quantum dots directly on InP substrate and an improved control of their size uniformity and density. These nanogrown InAs dots exhibit a high-efficiency photoluminescence band pointed at $1.55μm$ at room temperature.