Thermoelectric properties of doped titanium disulfides

We report herein the doping of titanium disulfide $(TiS2)$ with the pnictides (Pn): P, As, and Sb. The incorporation of these pnictides into titanium disulfide $(TiS2−xPnx)$ is performed at extremely low concentrations $(x∼0.2%)$⁠. The effects on the electronic transport of titanium disulfide by doping with arsenic is quite profound, reducing the resistivity and thermopower to $0.2mΩcm$ and $−35μV∕K$ at $300K$⁠, respectively, from $1.8mΩcm$ and $−170μV∕K$ at $300K$ for the parent compound $TiS2$⁠. For a wide range of thermopower values we find that the thermopower $(α)$ of these doped titanium disulfides is linearly related to the infrared reflectivity minimum and can be correlated by the experimentally determined proportionality of $λ=−0.0457α$⁠, where $λ$ is the wavelength of the minimum.