We report herein the doping of titanium disulfide with the pnictides (Pn): P, As, and Sb. The incorporation of these pnictides into titanium disulfide is performed at extremely low concentrations . The effects on the electronic transport of titanium disulfide by doping with arsenic is quite profound, reducing the resistivity and thermopower to and at , respectively, from and at for the parent compound . For a wide range of thermopower values we find that the thermopower of these doped titanium disulfides is linearly related to the infrared reflectivity minimum and can be correlated by the experimentally determined proportionality of , where is the wavelength of the minimum.
Thermoelectric properties of doped titanium disulfides
Edward E. Abbott, Joseph W. Kolis, Nathan D. Lowhorn, William Sams, Apparao Rao, Terry M. Tritt; Thermoelectric properties of doped titanium disulfides. Appl. Phys. Lett. 26 June 2006; 88 (26): 262106. https://doi.org/10.1063/1.2217190
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