The growth of C-doped GaN epilayers on (111) substrates by ammonia molecular beam epitaxy is reported. Highly insulating and crack-free -thick C-doped GaN layers have been prepared using ionized methane as the dopant source. Using such a template, two-dimensional electron gas structures with a mobility of for a sheet carrier density of have been achieved at room temperature. Fabricated devices demonstrated an excellent pinch-off characteristic as revealed by an on-to-off ratio higher than four orders of magnitudes and by very low leakage current ( at ).
REFERENCES
1.
Y.
Cordier
, F.
Semond
, J.
Massies
, B.
Dessertene
, S.
Cassette
, M.
Surrugue
, D.
Adam
, and S. L.
Delage
, Electron. Lett.
38
, 91
(2002
).2.
A.
Dadgar
, J.
Blasting
, A.
Diez
, A.
Alam
, M.
Heuken
, and A.
Krost
, Jpn. J. Appl. Phys., Part 2
39
, L1183
(1999
).3.
E.
Feltin
, B.
Beaumont
, M.
Laugt
, P.
de Mierry
, P.
Vennegues
, H.
Lahreche
, M.
Leroux
, and P.
Gibart
, Appl. Phys. Lett.
79
, 3230
(2001
).4.
H.
Ishikawa
, G.-Y.
Zhao
, N.
Nakada
, T.
Egawa
, T.
Jimbo
, and M.
Umeno
, Jpn. J. Appl. Phys., Part 2
38
, L492
(1999
).5.
Y.
Cordier
, M.
Higues
, F.
Semond
, F.
Natali
, P.
Lorenzini
, Z.
Bougrioua
, J.
Massies
, E.
Frayssinet
, B.
Beaumont
, P.
Gibart
, and J.-P.
Faurie
, J. Cryst. Growth
278
, 383
(2005
).6.
F.
Semond
, P.
Lorenzini
, N.
Grandjean
, and J.
Massies
, Appl. Phys. Lett.
78
, 335
(2001
).7.
J. B.
Webb
, H.
Tang
, S.
Rolfe
, and J. A.
Bardwell
, Appl. Phys. Lett.
75
, 953
(1999
).8.
J. B.
Webb
, H.
Tang
, J. A.
Bardwell
, S.
Rolfe
, Y.
Liu
, J.
Lapointe
, P.
Marshall
, and T. W.
McElwee
, Phys. Status Solidi A
188
, 271
(2001
).9.
P. R.
Hageman
, S.
Haffouz
, V.
Kirilyuk
, A.
Grzegorczyk
, and P. K.
Larsen
, Phys. Status Solidi A
188
, 523
(2001
).10.
S.
Haffouz
, H.
Tang
, J. A.
Bardwell
, E. M.
Hsu
, J. B.
Webb
, and S.
Rolfe
, Solid-State Electron.
49
, 802
(2005
).© 2006 American Institute of Physics.
2006
American Institute of Physics
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