The growth of C-doped GaN epilayers on p-Si (111) substrates by ammonia molecular beam epitaxy is reported. Highly insulating and crack-free 1.5-μm-thick C-doped GaN layers have been prepared using ionized methane as the dopant source. Using such a template, AlGaNGaN two-dimensional electron gas structures with a mobility of 1260cm2Vs for a sheet carrier density of 1.24×1013cm2 have been achieved at room temperature. Fabricated devices demonstrated an excellent pinch-off characteristic as revealed by an on-to-off ratio higher than four orders of magnitudes and by very low leakage current (10μAmm at VDS=20V).

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