We study the effect of vacancies and charged impurities on the performance of carbon nanotube transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations. We find that a single vacancy or charged impurity can decrease the drive current by more than 25% from the ballistic current. The threshold voltage shift in the case of charged impurities can be as large as 40mV⁠.

Topics
Localized states, Electrical properties and parameters, Field effect transistors, Transistors, Nanotubes, Oxides, Chemical elements, Charged impurities, Schrodinger equations
© 2006 American Institute of Physics.
2006
American Institute of Physics
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