We study the effect of vacancies and charged impurities on the performance of carbon nanotube transistors by self-consistently solving the three-dimensional Poisson and Schrödinger equations. We find that a single vacancy or charged impurity can decrease the drive current by more than 25% from the ballistic current. The threshold voltage shift in the case of charged impurities can be as large as .
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Research Article| June 12 2006
Influence of defects on nanotube transistor performance
Neophytos Neophytou, Diego Kienle, Eric Polizzi, M. P. Anantram; Influence of defects on nanotube transistor performance. Appl. Phys. Lett. 12 June 2006; 88 (24): 242106. https://doi.org/10.1063/1.2211932
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