The bias stress effect in pentacene thin-film transistors is characterized for different active layer thicknesses. We show that the shift in threshold voltage under applied bias is accelerated as the pentacene semiconductor layer thickness is increased from , and that this trend is not correlated with current, initial threshold voltage, or turn-on voltage. This study sheds light on the role of active material above the conductive channel in thin-film devices and describes effects that are important to consider when optimizing the structure of organic thin-film transistors.
REFERENCES
BSE is simulated using the method outlined in Ref. 4, with the following parameter values: , , , and , 0.555, 0.535, and for pentacene thicknesses of 10, 20, 40, and , respectively.
