Data are presented on a quantum-well (QW)-based (QW) heterojunction bipolar transistor laser modified with external (increased) mirror reflection yielding lower threshold current and higher collector breakdown voltage . Increased breakdown at lower currents is observed on the collector characteristics, at constant base current , as a slope change, a corner, and a narrow-line to broadband spectral shift from stimulated (high coherent optical field) to spontaneous (lower incoherent field) operation, a consequence of quenching or reducing photon-assisted tunneling (Franz-Keldysh effect) under the constraint as .
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Research Article| June 06 2006
Collector breakdown in the heterojunction bipolar transistor laser
N. Holonyak, Jr.;
G. Walter, A. James, N. Holonyak, M. Feng, R. Chan; Collector breakdown in the heterojunction bipolar transistor laser. Appl. Phys. Lett. 5 June 2006; 88 (23): 232105. https://doi.org/10.1063/1.2210079
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