InAs quantum dots (QDs) overgrown by a layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to . It is shown that PL properties of QDs are improved by thermal annealing. Finally, PL emission with a full width at half maximum is obtained at room temperature.
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Research Article| June 05 2006
Long wavelength emitting quantum dots on GaAs substrate
M. Richter, B. Damilano, J.-Y. Duboz, J. Massies, A. D. Wieck; Long wavelength emitting quantum dots on GaAs substrate. Appl. Phys. Lett. 5 June 2006; 88 (23): 231902. https://doi.org/10.1063/1.2209879
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