InAs quantum dots (QDs) overgrown by a layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to . It is shown that PL properties of QDs are improved by thermal annealing. Finally, PL emission with a full width at half maximum is obtained at room temperature.
© 2006 American Institute of Physics.
2006
American Institute of Physics
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