Long wavelength emitting InAs∕Ga0.85In0.15NxAs1−x quantum dots on GaAs substrate

Richter, M.; Damilano, B.; Duboz, J.-Y.; Massies, J.; Wieck, A. D.

doi:10.1063/1.2209879

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Research Article| June 05 2006

Long wavelength emitting $In As ∕ {Ga}_{0.85} {In}_{0.15} N_{x} {As}_{1 - x}$ quantum dots on GaAs substrate

M. Richter;

M. Richter ^a)

Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications

, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

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B. Damilano;

B. Damilano ^b)

Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications

, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

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J.-Y. Duboz;

J.-Y. Duboz

Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications

, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

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J. Massies;

J. Massies

Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications

, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

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A. D. Wieck

Lehrstuhl für Angewandte Festkörperphysik,

Ruhr-Universität Bochum

, Universitätsstraße 150, D-44780 Bochum, Germany

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Author & Article Information

M. Richter ^a)

,

B. Damilano ^b)

,

J.-Y. Duboz

,

J. Massies

,

A. D. Wieck

Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications

, Centre National de la Recherche Scientifique, Rue B. Grégory, Sophia-Antipolis, 06560 Valbonne, France

^a)

Also at Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum, Germany.

^b)

Electronic mail: [email protected]

Appl. Phys. Lett. 88, 231902 (2006)

https://doi.org/10.1063/1.2209879

InAs quantum dots (QDs) overgrown by a ${Ga}_{0.85} {In}_{0.15} N_{x} {As}_{1 - x}$ $(0 ⩽ x ⩽ 0.017)$ layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to $1.52 μ m$ ⁠. It is shown that PL properties of $In As ∕ {Ga}_{0.85} {In}_{0.15} N_{0.012} {As}_{0.988}$ QDs are improved by thermal annealing. Finally, $1.45 μ m$ PL emission with a $38.5 meV$ full width at half maximum is obtained at room temperature.

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Long wavelength emitting $In As ∕ {Ga}_{0.85} {In}_{0.15} N_{x} {As}_{1 - x}$ quantum dots on GaAs substrate

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Long wavelength emitting $In As ∕ {Ga}_{0.85} {In}_{0.15} N_{x} {As}_{1 - x}$ quantum dots on GaAs substrate