InAs quantum dots (QDs) overgrown by a Ga0.85In0.15NxAs1x(0x0.017) layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to 1.52μm. It is shown that PL properties of InAsGa0.85In0.15N0.012As0.988 QDs are improved by thermal annealing. Finally, 1.45μm PL emission with a 38.5meV full width at half maximum is obtained at room temperature.

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