Long wavelength emitting $InAs∕Ga0.85In0.15NxAs1−x$ quantum dots on GaAs substrate

InAs quantum dots (QDs) overgrown by a $Ga0.85In0.15NxAs1−x$ $(0⩽x⩽0.017)$ layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to $1.52μm$⁠. It is shown that PL properties of $InAs∕Ga0.85In0.15N0.012As0.988$ QDs are improved by thermal annealing. Finally, $1.45μm$ PL emission with a $38.5meV$ full width at half maximum is obtained at room temperature.