Kinetic Monte Carlo simulations of B diffusion and activation in preamorphized Si during annealing after solid phase epitaxial regrowth have been used to provide insight into the mechanisms that drive these phenomena. Simulations show that the presence of an initially high active B concentration along with a Si interstitial supersaturation set by end of range defects leads to simultaneous B deactivation and uphill diffusion through the capture of mobile interstitial B in the high concentration region during subsequent anneal treatments. Once the Si interstitial supersaturation decays close to equilibrium values, B clusters dissolve and emitted B diffuses downhill, following the B concentration gradient. The active B concentration at the minimum state of activation becomes higher as the annealing temperature increases as a consequence of a faster increase of the B cluster dissolution rate compared with the formation rate.
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8 May 2006
Research Article|
May 11 2006
Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Maria Aboy;
Maria Aboy
a)
Departamento de Electrónica,
Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Lourdes Pelaz;
Lourdes Pelaz
Departamento de Electrónica,
Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Pedro López;
Pedro López
Departamento de Electrónica,
Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Luis A. Marqués;
Luis A. Marqués
Departamento de Electrónica,
Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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R. Duffy;
R. Duffy
Philips Research Leuven
, Leuven, Belgium 3001
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V. C. Venezia
V. C. Venezia
Axcelis Technologies
, Beverly, Massachusetts 01915
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 88, 191917 (2006)
Article history
Received:
December 20 2005
Accepted:
March 29 2006
Citation
Maria Aboy, Lourdes Pelaz, Pedro López, Luis A. Marqués, R. Duffy, V. C. Venezia; Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth. Appl. Phys. Lett. 8 May 2006; 88 (19): 191917. https://doi.org/10.1063/1.2203334
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