Polycrystalline silicon thin film samples implanted and annealed at various temperatures have been studied using ultrafast laser pulse excitation. Nondegenerate pump-probe technique has been utilized to investigate carrier dynamics in the highly implanted samples at a relatively small fluence. A model based on two coupled differential equations has been used to fit the experimental data, giving a simple but adequate picture of the dynamics of this system. Basic sample parameters such as carrier trapping times, diffusion coefficient, and penetration depths have been extracted, providing a dependence on the annealing temperature for the samples under investigation.

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