Using high-resolution atomic force microscopy, we have shown extremely high stability of linear ferroelectric domains in epitaxial thin films heated up to , a significant advantage for technological applications. An elevated transition temperature is observed even in relatively thick films, despite relaxation of in-plane film-substrate lattice-mismatch-induced strain. We also demonstrate the negligible role of the film surface in determining the written domain-wall configuration, both by direct comparison of the surface roughness with domain-wall position at successive thermal cycles, and by measurements of domain-wall dynamics before and after heating.
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The nominal oven temperature settings were found to be consistently higher than the actual temperature, as measured with a thermocouple at the location of the sample.
