Transient bicarrier response in high-$k$ dielectrics and its impact on transient charge effects in high-$k$ complementary metal oxide semiconductor devices

In this letter, transient charge trapping and detrapping characteristics in high-$k$ $n∕p$ metal oxide semiconductor field effect transistors (MOSFETs) were studied. Transient charge trapping was found to be an interface thickness-limited phenomenon. Additionally, transient trapping of electrons, rather than holes, was found to be dominant even in $pMOSFETs$⁠. Transient charge recombination or bicarrier response within the high-$k$ layer was the main reason for the dependence on input signal in high-$k$ devices. Detrapping characteristics for $nMOSEFTs$ and $pMOSFETs$ were correlated to the transient hole and electron trappings, respectively.