Lateral quantum dots are formed in the two-dimensional electron gases of a high-mobility heterostructures by means of split Schottky gates. Palladium gates, defined by e-beam lithography and lift-off, show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing a total charge of about 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained heterosystem.
Lateral quantum dots in realized by a Schottky split-gate technique
T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler, F. Schäffler; Lateral quantum dots in realized by a Schottky split-gate technique. Appl. Phys. Lett. 17 April 2006; 88 (16): 162112. https://doi.org/10.1063/1.2197320
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