Data are presented showing significant structure in the collector characteristics of a transistor laser, a decrease (“compression”) in the common-emitter gain , that can be mapped in some detail and related to quantum well (QW) carrier recombination. The change in gain and laser wavelength corresponding to stimulated recombination (stimulated emission) on QW transitions, which is compared with operation in spontaneous recombination (cavity spoiled), is used with conventional transistor charge analysis to reveal the dynamic properties of the transistor laser.
Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser
R. Chan, M. Feng, N. Holonyak, A. James, G. Walter; Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Appl. Phys. Lett. 3 April 2006; 88 (14): 143508. https://doi.org/10.1063/1.2191448
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