We report the structural and longitudinal piezoelectric responses of epitaxial (PZT) films on (001) and Si substrates in the thickness range of . With increasing film thickness the tetragonality of PZT was reduced. The increase in value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The values of PZT films on Si substrates are higher than those on substrates . The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices.
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