Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

The effect of deposition temperature and film thickness on the work function of $TiSiN$ gate electrodes has been studied. It is shown that the work function of $TiSiN$ can be tuned from 4.28–$4.74eV$ on $SiO2$⁠, 4.40–$4.79eV$ on $HfO2$⁠, and 4.44–$4.83eV$ on $HfSiOx$⁠. For high-$k$ dielectrics, the work function can be tuned by $200meV$ on each side of the band gap, making it a suitable electrode for fully depleted silicon-on-insulator devices. Furthermore, $TiSiN$ deposition at high temperature increases the work function to $4.87eV$ while Si implantation increases it to $4.93eV$⁠, making $TiSiN$ a good $p$-type metal candidate.