Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes

We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to $300μm$⁠. We find that the contact resistance can be as low as $100Ωcm$ with narrowly spread fluctuations. For comparison, we have also performed scaling experiments on similar gold-contacted devices, and found that the reproducibility of FETs with nickel electrodes is largely superior. These results indicate that nickel is a very promising electrode material for the reproducible fabrication of low resistance contacts in organic FETs.