Electrical characteristics of bulk $GaN$-based Schottky rectifiers with ultrafast reverse recovery Available to Purchase

A vertical Schottky diode rectifier was fabricated using a bulk $n−GaN$ wafer. Pt Schottky contacts were prepared on the Ga face and full backside ohmic contact was prepared on the N face by using $Ti∕Al$⁠. The root mean square surface roughnesses of the Ga and N faces are 0.61 and $4.7nm$⁠, respectively. A relatively high breakdown field of $5.46kV∕cm$ was achieved with no additional edge termination. The breakdown field decreases as the size of the device increases. The background electron concentration of the bulk $GaN$ wafer was low $(5×1015cm−3)$⁠, which may lead to a relatively high breakdown field even with no special edge termination. The forward turn-on voltage was as low as $2.4V$ at the current density of $100A∕cm2$⁠. The device exhibited an ultrafast reverse recovery characteristics (reverse recovery time $<20ns$⁠).