The concept of utilizing an organic interlayer between metal electrodes and underlying semiconductor is introduced for organic thin-film transistors. Inserting the interlayer between the source/drain electrodes and pentacene leads to improving the effective mobility by more than 1 order of magnitude and the on-off current ratio by almost 1 order of magnitude. The improvement can be attributed to a reduction in contact resistance that is made possible by reducing the energy barrier with the introduction of the interlayer. Simultaneous formation and patterning of both the electrodes and the interlayer is accomplished in one single-step transfer of a bilayer of metal on organic through a bilayer transfer technique based on rigiflex lithography.
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13 March 2006
Research Article|
March 14 2006
Introduction of an interlayer between metal and semiconductor for organic thin-film transistors
S. Young Park;
S. Young Park
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-744, Korea
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Young H. Noh;
Young H. Noh
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-744, Korea
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Hong H. Lee
Hong H. Lee
a)
School of Chemical and Biological Engineering,
Seoul National University
, Seoul 151-744, Korea
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 88, 113503 (2006)
Article history
Received:
July 18 2005
Accepted:
February 10 2006
Citation
S. Young Park, Young H. Noh, Hong H. Lee; Introduction of an interlayer between metal and semiconductor for organic thin-film transistors. Appl. Phys. Lett. 13 March 2006; 88 (11): 113503. https://doi.org/10.1063/1.2186367
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