Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

Amorphous $LaAlO3$ thin films were deposited at room temperature directly on $n$-type and $p$-type Si (001) by molecular beam deposition. The dielectric properties of the stoichiometric amorphous $LaAlO3$ thin films deposited on silicon were determined through capacitance-voltage and current-voltage measurements. The electrical measurements indicate that the amorphous $LaAlO3$ thin films have a dielectric constant $(K)$ of $K=16±2$⁠. This is significantly lower than the $K=24$ of crystalline $LaAlO3$⁠. The equivalent oxide thickness values range between 9.8 and $15.5Å$ for films deposited on $n$-type silicon with physical thicknesses of $45–75Å$⁠.