Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces Available to Purchase

With the aim of improving the electrical and adhesion properties of the indium–tin–oxide (ITO) electrode/organic interface, we tested Cl- and $CF3$-terminated self-assembled monolayers (SAMs), which react with the indium atoms of the electrode, and compared the results to those obtained using a $CH3$-terminated SAM. The contact resistance of the interface between the Cl-terminated surface and the ITO electrode $(1.5kΩ)$ was found to be much lower than that of the interface between the ITO and the $CF3$-terminated surface $(21.3kΩ)$⁠, which can be attributed to the higher dipole moment of the In–Cl complex compared to the In–F complex. In the ITO films deposited on the $CH3$-terminated surface, the contact resistance $(138.0kΩ)$ was much higher than those of the reactive metal contacts because the ITO thin film deposited on the $CH3$-terminated surface does not react with the SAM.