Visible spectrum light-emitting transistors

Visible radiative recombination in the base layer of $AlGaInP∕InGaP$ light-emitting transistors (LETs) is reported. For this form of transistor, which previously has not existed, and with an emitter area of $100×100μm2$⁠, we demonstrate a current gain $β$ $(β≡ΔIC∕ΔIB)$ of 3.5 for the device operating in the common-emitter configuration. The LET $In0.49Ga0.51P$ base recombination radiation is centered in the visible at $λ=650nm$ (red emission).