Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents, we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source–drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy . The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices.
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29 August 2005
Research Article|
August 24 2005
Interaction of organic surfaces with active species in the high-vacuum environment
V. Podzorov;
V. Podzorov
a)
Department of Physics and Astronomy,
Rutgers University
, Piscataway, New Jersey 08854
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E. Menard;
E. Menard
Department of Materials Science and Engineering,
University of Illinois
, Urbana Champaign, Illinois
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S. Pereversev;
S. Pereversev
Department of Physics and Astronomy,
Rutgers University
, Piscataway, New Jersey 08854
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B. Yakshinsky;
B. Yakshinsky
Department of Physics and Astronomy,
Rutgers University
, Piscataway, New Jersey 08854
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T. Madey;
T. Madey
Department of Physics and Astronomy,
Rutgers University
, Piscataway, New Jersey 08854
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J. A. Rogers;
J. A. Rogers
Department of Materials Science and Engineering,
University of Illinois
, Urbana Champaign, Illinois
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M. E. Gershenson
M. E. Gershenson
Department of Physics and Astronomy,
Rutgers University
, Piscataway, New Jersey 08854
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a)
Electronic mail: [email protected]
Appl. Phys. Lett. 87, 093505 (2005)
Article history
Received:
April 19 2005
Accepted:
July 15 2005
Citation
V. Podzorov, E. Menard, S. Pereversev, B. Yakshinsky, T. Madey, J. A. Rogers, M. E. Gershenson; Interaction of organic surfaces with active species in the high-vacuum environment. Appl. Phys. Lett. 29 August 2005; 87 (9): 093505. https://doi.org/10.1063/1.2035323
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