We demonstrate thin-film ferroelectric transistors, made entirely from organic materials that are processed from solution. The devices consist of thin ferroelectric poly(vinylidene fluoride/trifluoroethylene) films sandwiched between electrodes made of conducting poly(3,4-ethylenedioxythiophene) stabilized with polystyrene-4-sulphonic acid. On top of this stack, an organic semiconductor is applied. The ferroelectric transistors, constructed using unipolar - or -type semiconductor channels, have remnant current modulations of with a retention time of hours. They can be switched in at operating voltages less than .
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The off-currents are independent of channel length and are due to leakage currents outside the active device through the nonpatterned semiconductor layer.