Transistor gate stack systems consisting of atomic layer deposited with polycrystalline silicon or TiN gate electrodes have been characterized by analytical electron microscopy to elucidate underlying physical contributions to electrical performance differences. High-angle annular dark-field scanning transmission electron microscopy was used to determine film and interface thickness dimensions and chemical analysis depth profiling was obtained from electron energy loss spectra and energy dispersive x-ray spectra. The high- gate dielectric film system is shown to be influenced by the choice of electrode material with the formation of an -poly-Si interface that increases the dielectric equivalent oxide thickness and may affect electron trapping characteristics.
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22 August 2005
Research Article|
August 15 2005
Physical comparison of transistors with polycrystalline silicon and TiN electrodes
P. S. Lysaght;
P. S. Lysaght
a)
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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B. Foran;
B. Foran
Advanced Technology Development Facility
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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G. Bersuker;
G. Bersuker
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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J. J. Peterson;
J. J. Peterson
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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C. D. Young;
C. D. Young
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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P. Majhi;
P. Majhi
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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B-H. Lee;
B-H. Lee
IBM Assignee at SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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H. R. Huff
H. R. Huff
SEMATECH
, 2706 Montopolis Drive, Austin, Texas 78741-6499
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 87, 082903 (2005)
Article history
Received:
January 10 2005
Accepted:
June 23 2005
Citation
P. S. Lysaght, B. Foran, G. Bersuker, J. J. Peterson, C. D. Young, P. Majhi, B-H. Lee, H. R. Huff; Physical comparison of transistors with polycrystalline silicon and TiN electrodes. Appl. Phys. Lett. 22 August 2005; 87 (8): 082903. https://doi.org/10.1063/1.2011827
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