We report on a novel scheme of substrate engineering to obtain high-quality GaN layers on Si substrates. Ion implantation of an AlNSi substrate is performed to create a defective layer that partially isolates the III-nitride layer and the Si substrate and helps to reduce the strain in the film. Raman spectroscopy shows a substantial decrease in in-plane strain in GaN films grown on nitrogen implanted substrates. This is confirmed by the enhancement of the E2 (TO) phonon frequency from 564 to 567cm1 corresponding to 84% stress reduction and substantial decrease in crack density for a 2-μm-thick GaN film. GaN films grown on implanted AlNSi substrate have better optical properties and smoother surface morphology as compared to nonimplanted AlNSi substrate.

1.
S.
Guha
and
N. A.
Bojarczuk
,
Appl. Phys. Lett.
72
,
415
(
1998
).
2.
C. A.
Tran
,
A.
Osinski
,
R. F.
Karlicek
, Jr.
, and
I.
Berishev
,
Appl. Phys. Lett.
75
,
1494
(
1999
).
3.
A.
Osinsky
,
S.
Gangopadhyay
,
J. W.
Yang
,
R.
Gaska
,
D.
Kuksekov
,
H.
Temkin
,
I. K.
Shmagin
,
Y. C.
Chang
,
J. F.
Muth
, and
R. M.
Kolbas
,
Appl. Phys. Lett.
72
,
551
(
1998
).
4.
A. T.
Schremer
,
J. A.
Smart
,
Y.
Wang
,
O.
Ambacher
,
N. C.
MacDonald
, and
J. R.
Shealy
,
Appl. Phys. Lett.
76
,
736
(
2000
).
5.
F.
Semond
,
P.
Lorenzini
,
N.
Grandjean
, and
J.
Massies
,
Appl. Phys. Lett.
78
,
335
(
2001
).
6.
S.-H.
Jang
, and
C.-R.
Lee
,
J. Cryst. Growth
253
,
64
(
2003
).
7.
S.
Zamir
,
B.
Meyler
, and
J.
Salzman
,
J. Cryst. Growth
243
,
375
(
2002
).
8.
Z.
Yang
,
F.
Guarin
,
I. W.
Tao
,
W. I.
Wang
, and
S. S.
Lyer
,
J. Vac. Sci. Technol. B
13
,
789
(
1995
).
9.
A.
Dadgar
,
M.
Poschenrieder
,
J.
Blasing
,
K.
Fehse
,
A.
Diez
, and
A.
Krost
,
Appl. Phys. Lett.
80
,
3670
(
2002
).
10.
S.
Zamir
,
B.
Meyler
, and
J.
Salzman
,
Appl. Phys. Lett.
78
,
288
(
2001
).
11.
S.
Zamir
,
B.
Meyler
, and
J.
Salzman
,
J. Cryst. Growth
230
,
341
(
2001
).
12.
E. K.
Koh
,
Y. J.
Park
,
E. K.
Kim
,
C. S.
Park
,
S. H.
Lee
,
J. H.
Lee
, and
S. H.
Choh
,
J. Cryst. Growth
218
,
214
(
2000
).
13.
C. W.
Pei
,
J. B.
Heroux
,
J.
Sweet
,
W. I.
Wang
,
J.
Chen
, and
M. F.
Chang
.
J. Vac. Sci. Technol. B
20
,
1196
(
2002
).
14.
L. B.
Freund
and
W. D.
Nix
,
Appl. Phys. Lett.
69
,
173
(
1996
).
15.
R.
Liu
,
F. A.
Ponce
,
A.
Dadgar
, and
A.
Krost
,
Appl. Phys. Lett.
83
,
860
(
2003
).
16.
K. Y.
Zang
,
L. S.
Wang
,
S. J.
Chua
, and
C. V.
Thompson
,
J. Cryst. Growth
268
,
515
(
2004
).
17.
S.
Guha
,
F.
Shahedipour
,
R. C.
Keller
,
V.
Yang
and
B. W.
Wessels
,
Appl. Phys. Lett.
78
,
58
(
2001
).
18.
L. S.
Wang
,
K. Y.
Zang
,
S.
Tripathy
, and
S. J.
Chua
.
Appl. Phys. Lett.
85
,
5881
(
2004
).
19.
W.
Qian
.
G. S.
Rohrer
,
M.
Skowronski
,
K.
Doverspike
,
L. B.
Rowland
, and
D. K.
Gaskill
,
Appl. Phys. Lett.
67
,
2284
(
1995
).
20.
M.
Jamil
,
J. R.
Grandusky
,
V.
Jindal
and
F.
Shahedipour-Sandvik
(unpublished).
You do not currently have access to this content.