In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for reliability assessment as well as design optimizations of on-chip interconnects. Direct evidence of electromigration-induced degradation in interconnect tree structure consisting of void nucleation and void movement in opposite direction to electron flow along the interface was unraveled. The peculiar electromigration behavior of Cu interconnect tree structures can be clearly understood based on this mechanism. Dependence of electromigration mechanism of a segment in a Cu interconnect tree on current configuration in neighboring interconnect segment is discussed in detail.
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22 August 2005
Research Article|
August 19 2005
Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures Available to Purchase
A. V. Vairagar;
A. V. Vairagar
School of Materials Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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S. G. Mhaisalkar;
S. G. Mhaisalkar
a)
School of Materials Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
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M. A. Meyer;
M. A. Meyer
AMD Saxony LLC & Co. KG
, Dresden, Germany
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E. Zschech;
E. Zschech
AMD Saxony LLC & Co. KG
, Dresden, Germany
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Ahila Krishnamoorthy;
Ahila Krishnamoorthy
Institute of Microelectronics
, 11 Science Park Road, Singapore 117685, Singapore
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K. N. Tu;
K. N. Tu
Department of Materials Science and Engineering,
UCLA
, Los Angeles, California 90095-1595
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A. M. Gusak
A. M. Gusak
Cherkasy National University
, Cherkasy 18017, Ukraine
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A. V. Vairagar
School of Materials Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
S. G. Mhaisalkar
a)
School of Materials Engineering,
Nanyang Technological University
, Singapore 639798, Singapore
M. A. Meyer
AMD Saxony LLC & Co. KG
, Dresden, Germany
E. Zschech
AMD Saxony LLC & Co. KG
, Dresden, Germany
Ahila Krishnamoorthy
Institute of Microelectronics
, 11 Science Park Road, Singapore 117685, Singapore
K. N. Tu
Department of Materials Science and Engineering,
UCLA
, Los Angeles, California 90095-1595
A. M. Gusak
Cherkasy National University
, Cherkasy 18017, Ukrainea)
Electronic mail: [email protected]
Appl. Phys. Lett. 87, 081909 (2005)
Article history
Received:
March 24 2005
Accepted:
July 05 2005
Citation
A. V. Vairagar, S. G. Mhaisalkar, M. A. Meyer, E. Zschech, Ahila Krishnamoorthy, K. N. Tu, A. M. Gusak; Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures. Appl. Phys. Lett. 22 August 2005; 87 (8): 081909. https://doi.org/10.1063/1.2033136
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